GaAs‐based multiple quantum well tunneling injection lasers

Current injection efficiency of InGaAsN quantum-well lasers

The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....

Emission wavelength of AlGaAsGaAs multiple quantum well lasers

Chapter 2 Nonlinear Dynamics of Multiple Quantum Well Lasers

Low dimensional structures have come a long way from being mere examples of applied quantum mechanics tv widespread applications in many modem devices and instruments. Quantum well, quantum cascade and quantum dot lasers make use of the very fundamental idea of carrier confinement within dimenswns that match their de Broglie wavelength. Quantum well lasers are used in many modern optoelectronic...

Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers

Generation of short optical pulses with semiconductor laser diodes is important for high bit rate time-division multiplexed communication systems, ultrafast data processing, and picosecond optoelectronic applications. Because the pulse shaping mechanisms are determined by the saturation and recovery time of the gain and absorber sections in mode-locked lasers,’ it is possible to generate short ...

Electron transport in AlGaInP quantum well lasers